Published August 1, 2011 | Version v1
Journal article Metadata-only

Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(-H) films using comb capacitor structure

Creators

  • 1. Nano Thin Film Materials Laboratory, Department of Physics, Jeju National University, Ara 1 Dong, Jeju 690-756 (Korea, Republic of)
  • 2. Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
  • 3. Department of Mechanical Engineering, Jeju National University, Ara 1 Dong, Jeju 690-756 (Korea, Republic of)
  • 4. Department of Electronic Engineering, Cheju National University, Ara 1 Dong, Jeju 690-756 (Korea, Republic of)
  • 5. Advanced Materials Division, Korean Institute of Science and Technology, Seoul 130-650 (Korea, Republic of)

Description

Low-dielectric constant SiOC(-H) films were deposited on p-type Si(100) substrates by plasma-enhanced chemical-vapor deposition (PECVD) using dimethyldimethoxy silane (DMDMS, C4H12O2Si) and oxygen gas as precursors. To improve the physicochemical properties of the SiOC(-H) films, the deposited SiOC(-H) films were exposed to ultraviolet (UV) irradiation in a vacuum. The bonding structure of the SiOC(-H) films was investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). The electrical characterization of SiOC(-H) films were carried out through I-V measurements using the comb-like patterns of the TiN/Al/Ti/SiOC(-H)/TiN/Al/Ti metal-insulator-metal (MIM) structure. Excessive UV treatment adversely affected the SiOC(-H) film, which resulted in an increased dielectric constant. Our results provide insight into the UV irradiation of low-k SiOC(-H) films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.04.058

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.04.058;
PII
S0040-6090(11)00874-1;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
20
Journal Page Range
p. 6732-6736
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
10. Asia-Pacific conference on plasma science and technology; SPSM 2010: 153. symposium on plasma science for materials
Acronym
APCPST 2010
Dates
4-8 Jul 2010
Place
Jeju Island (Korea, Republic of)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43052051
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; FILMS; FOURIER TRANSFORMATION; INFRARED SPECTRA; IRRADIATION; LEAKAGE CURRENT; OXYGEN; PERMITTIVITY; SILANES; SUBSTRATES; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
CHEMICAL COATING; CURRENTS; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; INTEGRAL TRANSFORMATIONS; MATERIALS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY; SURFACE COATING; TRANSFORMATIONS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.