Published October 1987 | Version v1
Journal article Metadata-only

Physical properties of MnIn2Te4 films and heterojunctions on their base

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

Possibilities of production of thin (0.1-0.4 μm) photosensitive films of MnIn2Te4 magnetic semiconductor as well as formation of heterojunctions on the basis of these films and silicon are determined experimentally. Spectral dependences of photosensitivity show, that the obtained heterojunctions may be used as wide-band photoconverter

Additional details

Additional titles

Original title (Russian)
Физические свойства пленок MnIn

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
21
Journal Issue
10
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
1916-1918
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
19066590
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; INDIUM TELLURIDES; MAGNETIC SEMICONDUCTORS; MANGANESE TELLURIDES; PHOTOCONDUCTIVITY; THIN FILMS
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; FILMS; INDIUM COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS