Published March 9, 1987
| Version v1
Journal article
Chemical effects in ion mixing of a ternary system (metal-SiO2)
- 1. California Institute of Technology, Pasadena, California 91125
Description
The mixing of Ti, Cr, and Ni thin films with SiO2 by low-temperature (-196--25 0C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 50
- Journal Issue
- 10
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 571-573
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18055842
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHROMIUM; KEV RANGE; KINETICS; MIXING; MORPHOLOGICAL CHANGES; NICKEL; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; SILICON OXIDES; TERNARY ALLOY SYSTEMS; TITANIUM
- Descriptors DEC
- ALLOY SYSTEMS; CHALCOGENIDES; ELEMENTS; ENERGY RANGE; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SILICON COMPOUNDS; TRANSITION ELEMENTS