The basic mechanisms of proton-enhanced diffusion of impurities in silicon

Experimental investigation of diffusion enhanced by high temperature proton irradiation shown that redistribution of impurities in silicon causes the appearance of two or more extrema located near the projected range of protons. The maximum to minimum impurity concentration ratio was sometimes more than an order of magnitude. Simple theoretical treatments involving up going diffusion and two-fluxes processes could explain only small values extrema. The purpose of this work is to give a theoretical treatment of a physical model of proton-enhanced diffusion with an internal electric field taken into account to support this explanation by different experiments