Published 1988 | Version v1
Book Metadata-only

Evaluation and characterization of [ZnSiAs2]1-x[2GaAs]x and [CuInSe2]1-x[2InAs]x for photovoltaic device applications

Creators

  • 1. Solar Energy Research Inst., Golden, CO (USA)

Description

The properties of two alloy-semiconductors, [ZnSiAs2]1-x[2GaAs]x and [CuInSe2]1-x[2InAs]x, are determined for potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical and electro-optical parameters are documented. Some emphasis is placed on the properties of the x = 0.5 materials, which have bandgaps of 1.88 and 0.80 eV for [ZnSiAs2]0.5[2GaAs]0.5 and [CuInSe2]0.5[2InAs]0.5, respectively. Preliminary data on CdS/[ZnSiAs2]0.5[2GaAs]0.5 cell structures are presented to demonstrate the device feasibility of this semiconductor

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Twentieth IEEE photovoltaic specialists conference, 1988
Imprint Pagination
1671 p.
Series
Volume 1-2.
Journal Page Range
p. 1531-1536.

Conference

Title
20. IEEE photovoltaic specialists conference.
Dates
26-30 Sep 1988.
Place
Las Vegas, NV (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21035329
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COPPER SELENIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM SELENIDES; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SILICON ARSENIDES; SOLAR CELLS; ZINC ARSENIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COPPER COMPOUNDS; CRYSTALS; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS

Optional Information

Secondary number(s)
CONF-880965--.