Published 2018 | Version v1
Journal article

Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥0.10

Description

In this paper, the temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn1-xInxTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. Finally, the introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity.

Availability note (English)

Available from https://www.osti.gov/pages/biblio/1422598; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review B
Journal Volume
97
Journal Issue
2
Journal Page Range
vp.
ISSN
2469-9950

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