Published 2018
| Version v1
Journal article
Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥0.10
Creators
- Smylie, M. P.1, 2
- Claus, H.2
- Kwok, W.-K.2
- Louden, E. R.1
- and others
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- University of Notre Dame, IN (United States)
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- 1. University of Notre Dame, IN (United States). Dept. of Physics
- 2. Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division
Description
In this paper, the temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn1-xInxTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. Finally, the introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity.
Availability note (English)
Available from https://www.osti.gov/pages/biblio/1422598; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 97
- Journal Issue
- 2
- Journal Page Range
- vp.
- ISSN
- 2469-9950
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 49067999
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRITICAL FIELD; DOPED MATERIALS; ELECTRICAL INSULATORS; FERROELECTRIC MATERIALS; INTERACTIONS; MEV RANGE; PENETRATION DEPTH; SUPERCONDUCTIVITY; SYMMETRY; TEMPERATURE DEPENDENCE; TIN TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ENERGY RANGE; EQUIPMENT; MAGNETIC FIELDS; MATERIALS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC05-00OR22725; SC0005051
- Funding organization
- USDOE Office of Science - SC, Basic Energy Sciences (BES) (SC-22) (United States)
- Secondary number(s)
- OSTIID--1422598