Published June 16, 2008 | Version v1
Journal article Metadata-only

Study of in-plane orientation of epitaxial AlN films grown on (111) SrTiO3

Creators

  • 1. Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region (China)
  • 2. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing (China)

Description

Substrate temperature and chemical etching were demonstrated to be dominant factors in determining the in-plane orientation of AlN films grown epitaxially on SrTiO3 (STO) (111) substrates by magnetron sputtering. Single-domain epitaxial AlN films were grown at moderate temperatures of 270-370 deg. C with a sharp interface and orientation relationship of [2110]AlN parallel [011]STO and (0002)AlN parallel (111)STO. At temperature above 470 deg. C, an additional 30 deg. in-plane-rotated AlN domain appeared, and increased in percentage with increasing temperature. A model based on the reconstruction of STO (111) surfaces from (1x1) to (√(3)x√(3))R30 deg. was proposed to account for the formation of this new domain

Additional details

Identifiers

DOI
10.1063/1.2948854;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
24
Journal Page Range
p. 241911-241911.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40003346
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM NITRIDES; CRYSTAL GROWTH; DEPOSITION; EPITAXY; ETCHING; FILMS; LAYERS; MAGNETRONS; SEMICONDUCTOR MATERIALS; SPUTTERING; STRONTIUM TITANATES; SUBSTRATES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ALUMINIUM COMPOUNDS; CRYSTAL GROWTH METHODS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; STRONTIUM COMPOUNDS; SURFACE FINISHING; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2008 American Institute of Physics