Published August 5, 2009 | Version v1
Journal article Metadata-only

Dislocations in Si nanocrystals embedded in SiO2

Creators

  • 1. Cultivation Base for the State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China)
  • 2. Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  • 3. INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, QC, J3X 1S2 (Canada)

Description

Si nanocrystals (Si nc) were formed by the implantation of Si+ into a SiO2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy has been used to investigate the dislocations in the Si nc produced by a high-dose (ion fluence of 3 x 1017 cm-2) implantation. Three different kinds of dislocations, namely perfect, extended and mismatch dislocations, have been observed in some Si nc. The possible formation mechanism for these dislocations has been discussed. The dislocations in the Si nc are expected to have a great influence on the photoluminescence from Si nc embedded in SiO2.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/20/31/315704

Additional details

Identifiers

DOI
10.1088/0957-4484/20/31/315704;
PII
S0957-4484(09)17156-8;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
20
Journal Issue
31
Journal Page Range
[4 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42071575
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANNEALING; DISLOCATIONS; NANOSTRUCTURES; PHOTOLUMINESCENCE; RADIATION DOSES; SILICON IONS; SILICON OXIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOSES; ELECTRON MICROSCOPY; EMISSION; FILMS; HEAT TREATMENTS; IONS; LINE DEFECTS; LUMINESCENCE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SILICON COMPOUNDS