Hall mobility in electron-irradiated CdS

Hall measurements have been made over the temperature range from 10 to 300 K on an electron-irradiated CdS single crystal in which impurity conduction is suppressed. The Hall mobility of electrons in the conduction band has been observed. It increases with decreasing temperature, reaches a maximum at 50 K, and then decreases on account of ionized impurity scattering, but at temperatures below 20 K increases rapidly with decreasing temperature. Below 20 K the Hall mobility was fairly sensitive to the electric Field. The rapid increase at low temperatures cannot be explained by the Brooks-Herring formula for ionized impurity scattering. The rapid increase at low temperatures seems to be a first evidence for the transmission resonances in electron conduction process in semiconductors which were suggested theoretically by Blatt. (author)