Published December 23, 2011
| Version v1
Journal article
The influence of the SiO2 interlayer on transfer characteristic in tin oxide thin film transistor
- 1. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
Description
In this article, we report the fabrication on SnO2 thin film transistors (TFTs) fabricated by DC sputtering system. SnO2 based TFTs have been reported previously, and all the TFTs operate depletion-mode, requiring the application of a gate voltage to turn it off. In contrast to previously reports, the SnO2 TFT reported herein operates as an enhancement-mode device, requiring the application of a gate voltage to turn the device on. Furthermore, we introduce an hafnium-tin oxide (HfSnO) semiconductor materials that have been developed for use as p-channel TFTs.
Additional details
Identifiers
- DOI
- 10.1063/1.3666324;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1399
- Journal Issue
- 1
- Journal Page Range
- p. 199-200
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 30. international conference on the physics of semiconductors
- Dates
- 25-30 Jul 2010
- Place
- Seoul (Korea, Republic of)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43091035
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRODES; FABRICATION; HAFNIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPUTTERING; THIN FILMS; TIN OXIDES; TRANSISTORS
- Descriptors DEC
- CHALCOGENIDES; FILMS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics