Defects and radiation induced defects in insulating materials

The study of defects in ceramic type materials (Al2O3, SiO2, AlN) enables one to understand the evolution of their properties when submitted to various radiations. The relation between their electronic structure and the mechanical, optical, electrical behaviour of insulators is a key point for material assessment in C.T.R. The electronic structure of bulk samples, has been studied by electron spectroscopy (photoemission and electron energy loss spectroscopy). Furthermore radiation effects produced under electronic excitation are presented. (author)