Published February 1973
| Version v1
Journal article
Properties of ion-implanted MOS structures
- 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Oyo Butsuri
- Journal Volume
- 42
- Journal Issue
- 2
- Series
- Oyo Butsuri.
- Journal Page Range
- 124-132
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 5128452
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM IONS; ALUMINIUM 27; ANNEALING; BORON 11 BEAMS; CARRIER MOBILITY; CRYSTAL DOPING; DOSE RATES; ELECTRICAL PROPERTIES; FILMS; HEAVY IONS; ION IMPLANTATION; MOSFET; NOISE; PHOSPHORUS IONS; PHOSPHORUS 31; PHYSICAL RADIATION EFFECTS; SILICON IONS; SILICON 28
- Descriptors DEC
- ALUMINIUM ISOTOPES; BEAMS; CHARGED PARTICLES; EVEN-EVEN NUCLEI; HEAT TREATMENTS; ION BEAMS; IONS; ISOTOPES; LIGHT NUCLEI; MOBILITY; MOS TRANSISTORS; NUCLEI; ODD-EVEN NUCLEI; PHOSPHORUS ISOTOPES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON ISOTOPES; STABLE ISOTOPES; TRANSISTORS