Influence of ejection angle on residual stress and optical properties of sputtering Ta2O5 thin films
Creators
- 1. Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Road, Setwen, Taichung, Taiwan (China)
Description
The optical properties and residual stress of tantalum pentaoxide (Ta2O5) thin films prepared by ion beam sputtering deposition was investigated experimentally as a function of sputtering ejection angle. Thin films were deposited on unheated BK7 glass substrates and silicon wafers at different positions relatively to a metal target, which corresponds to different ejection angles. The optical constants, film thickness, refractive index and extinction coefficients, of the Ta2O5 films were shown to be influenced by the ejection angle. The residual stresses in sputtering Ta2O5 thin films were also found to vary with the ejection angle. All deposited films were amorphous as measured by the X-ray diffraction method. The surface morphology and microstructure of thin films were analyzed by atomic force microscopy and scanning electron microscopy
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.08.049Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.08.049;
- PII
- S0169-4332(08)01875-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 255
- Journal Issue
- 5
- Journal Page Range
- p. 2890-2895
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40087180
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; DEPOSITION; ION BEAMS; MICROSTRUCTURE; MORPHOLOGY; REFRACTIVE INDEX; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; TANTALUM OXIDES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; MICROSCOPY; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; STRESSES; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.