Published February 2009 | Version v1
Journal article Metadata-only

A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

Creators

  • 1. Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055 (China)
  • 2. TSRC and ULTRAS Team, EECS, Peking University, Beijing 100871 (China)
  • 3. Department of Electronics and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong (China)

Description

A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/2/024001

Additional details

Identifiers

DOI
10.1088/1674-4926/30/2/024001;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
2
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41079251
Subject category
S97: MATHEMATICAL METHODS AND COMPUTING;
Descriptors DEI
APPROXIMATIONS; CYLINDRICAL CONFIGURATION; MOSFET; POISSON EQUATION; SIMULATION; SURFACE POTENTIAL; THREE-DIMENSIONAL CALCULATIONS
Descriptors DEC
CALCULATION METHODS; CONFIGURATION; DIFFERENTIAL EQUATIONS; EQUATIONS; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; PARTIAL DIFFERENTIAL EQUATIONS; POTENTIALS; SEMICONDUCTOR DEVICES; TRANSISTORS