Published August 2011 | Version v1
Journal article

Reduction of the Far-Field Divergence Angle of an 850 nm Multi-Leaf Holey Vertical Cavity Surface Emitting Laser

  • 1. Key Laboratory of Opto-electronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124 (China)

Description

By introducing multi-leaf sectorial holes into an oxidation confined 850 nm vertical cavity surface emitting laser (VCSEL), the far-field divergence angle is reduced. The finite-difference time-domain method is used to simulate the far-field pattern of the multi-leaf holey VCSEL with different etching depths and different shapes of the oxide aperture in diameter R. Based on the simulation result, we design and fabricate a multi-leaf holey VCSEL and its divergence angle is only 6°. The experimental results agree well with the theoretical predication. (fundamental areas of phenomenology(including applications))

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/28/8/084209

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
28
Journal Issue
8
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45004629
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
APERTURES; COMPUTERIZED SIMULATION; DESIGN; FINITE DIFFERENCE METHOD; LASER CAVITIES; OXIDATION; OXIDES; SOLID STATE LASERS; SURFACES
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; CHEMICAL REACTIONS; ITERATIVE METHODS; LASERS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; OPENINGS; OXYGEN COMPOUNDS; SIMULATION