Published August 2011
| Version v1
Journal article
Reduction of the Far-Field Divergence Angle of an 850 nm Multi-Leaf Holey Vertical Cavity Surface Emitting Laser
- 1. Key Laboratory of Opto-electronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124 (China)
Description
By introducing multi-leaf sectorial holes into an oxidation confined 850 nm vertical cavity surface emitting laser (VCSEL), the far-field divergence angle is reduced. The finite-difference time-domain method is used to simulate the far-field pattern of the multi-leaf holey VCSEL with different etching depths and different shapes of the oxide aperture in diameter R. Based on the simulation result, we design and fabricate a multi-leaf holey VCSEL and its divergence angle is only 6°. The experimental results agree well with the theoretical predication. (fundamental areas of phenomenology(including applications))
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/28/8/084209Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 28
- Journal Issue
- 8
- Journal Page Range
- [3 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45004629
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- APERTURES; COMPUTERIZED SIMULATION; DESIGN; FINITE DIFFERENCE METHOD; LASER CAVITIES; OXIDATION; OXIDES; SOLID STATE LASERS; SURFACES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CHEMICAL REACTIONS; ITERATIVE METHODS; LASERS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; OPENINGS; OXYGEN COMPOUNDS; SIMULATION