Published March 1985
| Version v1
Journal article
Electronic transport in a-Si:H produced by ion implantation
- 1. Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany, F.R.)
Description
Thin crystalline layers of Si have been transformed into homogeneously hydrogenated amorphous material by implantation of H and Ne ions. These specimens have been analyzed by electrical and optical techniques. The general conclusion is that the material properties are quite comparable to those reported for high quality glow discharge-produced films. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. B
- Journal Volume
- 7/8
- Journal Issue
- pt.1
- Series
- CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 299-303
- ISSN
- 0168-583X
Conference
- Title
- Ion beam modification of materials conference (IBMM '84).
- Dates
- 16-29 Jul 1984.
- Place
- Ithaca, NY (USA).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 16067332
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; DEPTH; DOSE RATES; ELECTRIC CONDUCTIVITY; ENERGY GAP; FILMS; HIGH TEMPERATURE; HYDROGEN ADDITIONS; HYDROGEN IONS; HYDROGENATION; INFRARED SPECTRA; ION IMPLANTATION; MEDIUM TEMPERATURE; NEON IONS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL REACTIONS; DIMENSIONS; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; IONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS; SPECTRA