Published March 1, 2004
| Version v1
Journal article
Fabrication of robust Bi3.25La0.75Ti3O12 thin film resistant to hydrogen damage
Creators
Description
Ferroelectric bismuth lanthanum titanate (Bi3.25La0.75Ti3O12; BLT) thin films were deposited on Pt/TiO2/SiO2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600-700 deg. C. The spontaneous polarization (Ps) and the switching polarization (2Pr) of BLT film annealed at 700 deg. C for 30 min were 22.6 μC/cm2 and 29.1 μC/cm2, respectively. Moreover, the BLT capacitor did not show any significant reduction of hysteresis for 90 min at 300 deg. C in the forming gas atmosphere
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2003.11.162;
- PII
- S0040609003017590;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 450
- Journal Issue
- 2
- Journal Page Range
- p. 261-264
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37016689
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BISMUTH COMPOUNDS; DAMAGE; DEPOSITION; FABRICATION; HYDROGEN; LANTHANUM COMPOUNDS; POLARIZATION; SILICON OXIDES; SOLUTIONS; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TITANATES; TITANIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; DISPERSIONS; ELEMENTS; FILMS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; MIXTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; SILICON COMPOUNDS; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.