Published 1990
| Version v1
Book
Ion beam annealing of Si co-implanted with Ga and As
- 1. Oak Ridge National Lab., TN (USA)
- 2. Solar Energy Research Inst., Golden, CO (USA)
Description
Ion beam annealing of amorphous Si(100) layers formed by co-implantation of overlapping Ga and As distributions is studied. Annealing was done using 750 keV Si+ ions with the Si substrate held at 300 degrees C. The samples were characterized using 2.0 and 5.0 MeV He+ backscattering/channeling as well as by transmission electron microscopy (TEM). Crystallization of the amorphous Si layer occurs during irradiation via solid-phase-epitaxial growth without impurity precipitation or segregation. Both the Ga and As are mainly substitutional in the Si lattice, even at concentrations in excess of 7 at. % for each species. These results are attributed to compensation effects, most likely through ion pairing of the dopants
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-045-3
- Imprint Title
- Beam-solid interactions, physical phenomena
- Imprint Pagination
- 872 p.
- Journal Page Range
- p. 143-148.
Conference
- Title
- physical phenomena.
- Acronym
- Conference on beam-solid interactions
- Dates
- 27 Nov - 2 Dec 1989.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22053065
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ARSENIC IONS; BACKSCATTERING; CRYSTAL LATTICES; CRYSTALLIZATION; GALLIUM IONS; IMPURITIES; ION BEAMS; ION IMPLANTATION; IRRADIATION; KEV RANGE 100-1000; PAIR PRODUCTION; SILICON IONS; SOLID-STATE PLASMA; TRANSMISSION ELECTRON MICROSCO
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MICROSCOPY; PARTICLE PRODUCTION; PHASE TRANSFORMATIONS; PLASMA; SCATTERING
Optional Information
- Secondary number(s)
- CONF-8911139--.