Published 1990
| Version v1
Book
Phase equilibrium in semiconductors type A3B5(InAs, GaSb, InP) - impurity systems
Creators
Description
Distribution of impurities (Tl, Se) in InAs, GaSb, InP semiconductor monocrystals depending on crystallization rate and doping level have been considered. Electric properties with regard for impurity atom content and character of phase equilibria in the systems studied have been analyzed. 27 figs.; 7 tabs
Additional details
Additional titles
- Original title (Russian)
- Характер фазового равновесия в полупроводниках типа А
Publishing Information
- Publisher
- Donish.
- Imprint Place
- Dushanbe (USSR)
- Imprint Title
- Physical chemistry of phenomena at semiconductor crystallization
- Imprint Pagination
- 160 p.
- Journal Page Range
- p. 105-126.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22059317
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MONOCRYSTALS; PHASE STUDIES; QUANTITY RATIO; SELENIUM ADDITIONS; SEMICONDUCTOR MATERIALS; SOLUBILITY; THALLIUM ADDITIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTALS; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Notes
- Imprint:Fizikokhimiya segregatsionnykh yavlenij pri kristallizatsii poluprovodnikov.