A new approach for calculation of projected range distributions of implanted ions in semiconductors

Ion implantation plays an important role in fabrication of many types of semiconductor devices. Integrated circuits simulation of ion implantation and computation of projected range distribution is the corner stone in the design in VLIS. In this paper, a new physical model is presented for this purpose. This model is based on a transport equation technique similar to that employed by Furukawa and Ishiwara but with considering angular scattering of implanted ions. This model is capable of using all types of nuclear reaction crass sections. Comparison of results of this simulation with experimental results and other calculation proves the high accuracy of the presented physical model