Electron semiconductor detector for a scanning electron microscope

The design is described and parameters are given of a four-section electron detector (SED) based on silicon diodes with a p-n shallow junction. The design and manufacturing process of the SED ensure in photogalvanic regime the sensitivity to electron flux Se approximately 0.20 AxW-1; with the best specigs the Ssub(e) reaches 0.23 AxW-1. The detector time constant is less than 2 μs. The sensitivity spread between the SED sensors does not exceed 15%