Published January 1986
| Version v1
Journal article
Study of implantation profiles of aluminium in silicon by the method of ion-photon spectroscopy
Description
Measurements of concentration distribution profiles of Al implanted in Si with the energy of 40 keV at doses 3x103, 1x103, 3x102, 1x102 mKl/cm2 are carried out by the methods of ion-photon (IPS) and Auger electron spectroscopy (AES). Data obtained by IPS and AES agree well between each other. The IPS method is shown to be successfully used for layer-by-layer analysis
Additional details
Additional titles
- Original title (Russian)
- Изучение имплантационных профилей алюминия в кремнии методом ионно-фотонной спектроскопии
Publishing Information
- Journal Title
- Radiotekh. Ehlektron.
- Journal Volume
- 31
- Journal Issue
- 1
- Series
- Radiotekh. Ehlektron.
- Journal Page Range
- 210-211
- ISSN
- 0033-8494
- CODEN
- RAELA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 18003560
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM ADDITIONS; ALUMINIUM IONS; AUGER ELECTRON SPECTROSCOPY; DEPTH; EMISSION SPECTROSCOPY; ION IMPLANTATION; ION SPECTROSCOPY; KEV RANGE 10-100; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; SEMIMETALS; SPECTROSCOPY
Optional Information
- Notes
- For English translation see the journal Radio Engineering and Electronic Physics (USA).