Raman photoluminescence spectra of silicon nanowires synthesized by a vapor phase transport method

Silicon nanowires were successfully synthesized by a thermal evaporation method. We have observed a strong and broad emission band centered at 670 nm, which is attributed to the quantum confinement effect related to Si nanostructures embedded in the complex SiOx matrix. By fitting an experimental Raman spectrum, we confirm that the as-received wires possess crystalline silicon cores whose sizes were around 5 nm. Furthermore, the abnormal dependence of integral photoluminescence intensity on measured temperature was investigated