Published February 1, 2012 | Version v1
Journal article

Nucleation, growth and properties of Co nanostructures electrodeposited on n-Si(1 1 1)

  • 1. Laboratoire de Chimie, Ingénierie Moléculaire et Nanostructures, Université F. Abbas-Sétif, 19000 (Algeria)
  • 2. Departments of Chemistry, Istanbul Technical University, Maslak 34469, Istanbul (Turkey)
  • 3. Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS - Université de Strasbourg, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France)

Description

In the present work, cobalt thin films deposited directly on n-Si(1 1 1) surfaces by electrodeposition in Watts bath have been investigated. The electrochemical deposition and properties of deposits were studied using cyclic voltammetry (CV), chronoamperometry (CA), ex situ atomic force microscopy (AFM), X-ray diffraction (XRD) and alternating gradient field magnetometer (AGFM) techniques. The nucleation and growth kinetics at the initial stages of Co studied by current transients indicate a 3D island growth (Volmer-Weber); it is characterized by an instantaneous nucleation mechanism followed by diffusion limited growth. According to this model, the estimated nucleus density and diffusion coefficient are on the order of magnitude of 106 cm-2 and 10-5 cm2 s-1, respectively. AFM characterization of the deposits shows a granular structure of the electrodeposited layers. XRD measurements indicate a small grain size with the presence of a mixture of hcp and fcc Co structures. The hysteresis loops with a magnetic field in the parallel and perpendicular direction and showed that the easy magnetization axis of Co thin film is in the film plane.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2011.12.060

Additional details

Identifiers

DOI
10.1016/j.apsusc.2011.12.060;
PII
S0169-4332(11)01962-3;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
258
Journal Issue
8
Journal Page Range
p. 3907-3912
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.