Published May 15, 2010 | Version v1
Journal article Metadata-only

Effect of ultraviolet and x-ray radiation on the work function of TiO2 surfaces

Creators

  • 1. Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States)
  • 2. Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)
  • 3. Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

Description

The work functions of nanocrystalline anatase (TiO2) thin films and a rutile single crystal were measured using photoemission spectroscopy (PES). The nanocrystalline titanium dioxide films were deposited in-vacuum using electrospray thin film deposition. A comparison between ultraviolet photoemission spectroscopy (UPS) and low intensity x-ray photoemission spectroscopy (LIXPS) work function measurements on these samples revealed a strong, immediate, and permanent work function reduction (>0.5 eV) caused by the UPS measurements. Furthermore, it was found that regular XPS measurements also reduce the work function after exposure times ranging from seconds to minutes. These effects are similar in magnitude to artifacts seen previously on indium tin oxide (ITO) substrates characterized with XPS and UPS, and are likely related to the formation of a surface dipole through the photochemical hydroxylation of oxygen vacancies present on the TiO2 surface.

Additional details

Identifiers

DOI
10.1063/1.3410677;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
107
Journal Issue
10
Journal Page Range
p. 103705-103705.8
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42069697
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPARATIVE EVALUATIONS; ELECTRODEPOSITION; EMISSION SPECTROSCOPY; EV RANGE; INDIUM COMPOUNDS; MONOCRYSTALS; NANOSTRUCTURES; PHOTOCHEMISTRY; PHOTOEMISSION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SURFACES; THIN FILMS; TIN OXIDES; TITANIUM OXIDES; ULTRAVIOLET RADIATION; VACANCIES; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
CHALCOGENIDES; CHEMISTRY; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; ELECTROLYSIS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; EMISSION; ENERGY RANGE; EVALUATION; FILMS; FUNCTIONS; LYSIS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SECONDARY EMISSION; SPECTROSCOPY; SURFACE COATING; TIN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2010 American Institute of Physics