Published 1996 | Version v1
Book Metadata-only

Parasitic reactions between alkyls and ammonia in OMVPE

Creators

  • 1. Hewlett-Packard Optoelectronics Div., San Jose, CA (United States)

Description

The parasitic reactions between ammonia and commonly used alkyls have been studied in a horizontal OMVPE reactor. The results indicate that parasitic reactions between TMAl and NH3 is severe, leading to the necessity to grow AlN at low reactor pressure. On the other hand, parasitic reactions between TMGa + NH3 and TMIn + NH3 are not significant and it is possible to grow GaN and GaInN at any reactor pressure

Additional details

Additional titles

Augmented title (English)
Organometallic Vapor Phase Epitaxy

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-298-7
Imprint Title
Gallium nitride and related materials
Imprint Pagination
993 p.
Series
Materials Research Society symposium proceedings, Volume 395.
Journal Page Range
p. 103-108.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
27 Nov - 1 Dec 1995.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28012241
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ALUMINIUM NITRIDES; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; EFFICIENCY; EXPERIMENTAL DATA; GALLIUM NITRIDES; INDIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; PRESSURE DEPENDENCE; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION
Descriptors DEC
ALUMINIUM COMPOUNDS; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DEPOSITION; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; ORGANIC COMPOUNDS; PNICTIDES; SCATTERING; SURFACE COATING

Optional Information

Secondary number(s)
CONF-951155--.