Published May 2005
| Version v1
Journal article
Crossover of the 5f electrons from localized to itinerant in an antiferromagnet UPtGa5
Creators
- 1. Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment
- 2. Max-Planck-Institute (Germany)
- 3. Kyoto Sangyo Univ., Faculty of Science, Kyoto (Japan)
- 4. Osaka Univ., Low Temperature Center, Toyonaka, Osaka (Japan)
- 5. Osaka Univ., Graduate School of Science, Osaka (Japan)
Description
We have succeeded in growing a high-quality single crystal of UPtGa5 and measured the de Haas-van Alphen effect and high-temperature magnetic susceptibility up to 800 K. These experimental results indicate that a crossover effect of the 5f electrons from the localized nature at high temperatures to the itinerant one at low temperatures occurs in an antiferromagnet UPtGa5. (author)
Additional details
Publishing Information
- Journal Title
- Kotai Butsuri
- Journal Volume
- 40
- Journal Issue
- 5
- Journal Page Range
- p. 343-351
- ISSN
- 0454-4544
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 36072789
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- COMPUTERIZED TOMOGRAPHY; DEPLETION LAYER; ELECTRODES; ENERGY RESOLUTION; FILTERS; GRIDS; SEMICONDUCTOR DETECTORS; SILICON; SUBSTRATES; X-RAY DETECTION
- Descriptors DEC
- DETECTION; DIAGNOSTIC TECHNIQUES; ELECTRODES; ELEMENTS; LAYERS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMIMETALS; TOMOGRAPHY
Optional Information
- Notes
- 28 refs., 14 figs., 2 tabs.