Published May 2012
| Version v1
Journal article
Optical properties of thallium indium disulfide (TlInS2) single crystals
Creators
- 1. Scientific-practical material research centre Minsk (Belarus)
- 2. Inst. of physics, Baku (Azerbaijan)
Description
Transmission, photoluminescence, and reflectance spectra of TlInS2 single crystals grown by the Bridgman-Stockbarger method were measured at 4.2 K near the fundamental absorption edge. Narrow lines at ∼2.5535 and ∼2.5694 eV were observed in the transmission spectrum and assigned to ground and excited free-exciton states, respectively. The free-exciton binding energy and band-gap energy Eg were found to be ∼21.2 meV and ∼2.5747 eV, respectively. A recombination mechanism was proposed for the TlInS2 near-band-edge and deep luminescence. (authors)
Additional details
Additional titles
- Original title (Russian)
- Оптические свойства монокристаллов дисульфида таллия и индия TlInS
Publishing Information
- Journal Title
- Zhurnal Prikladnoj Spektroskopii
- Journal Volume
- 79
- Journal Issue
- 3
- Journal Page Range
- p. 418-423
- ISSN
- 0514-7506
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 43124338
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; ENERGY GAP; EXCITONS; INDIUM COMPOUNDS; LIGHT TRANSMISSION; MONOCRYSTALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RECOMBINATION; SULFUR COMPOUNDS; THALLIUM COMPOUNDS
- Descriptors DEC
- CRYSTALS; EMISSION; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; QUASI PARTICLES; SORPTION; TRANSMISSION
Optional Information
- Notes
- 26 refs., 5 figs.