Effect of argon sputtering on XPS depth-profiling results of Si/Nb/Si

Highlights: • Si/Nb/Si trilayers with 9.5 and 1.3 nm thick niobium layer prepared by magnetron sputtering were studied using XPS depth-profiling technique. • Analysis of the Nb 3d, Si 2p HR XPS along with VB spectra show a strong modification of electronic structure during argon sputtering procedure. - Abstract: Ultrathin Si/Nb/Si trilayer is an excellent example of a system for which dimensionality effects, together with other factors like type of a substrate material and growth method, influence strongly its superconducting properties. This study offers some important insights into experimental investigation of density of states of such a system with the aim to identify an electronic structure of the interface as a function of niobium layer thickness. For that, two Si/Nb/Si trilayers with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were studied using high-resolution (HR) XPS depth-profile techniques. Strong influence of sputtering was observed, which resulted in severe intermixture of Si and Nb atoms. Nevertheless, a sharp top interface and metallic phase of niobium were detected for the thicker layer sample. On the contrary, a Nb-rich mixed alloy at top interface was observed for the thinner layer sample.