Published April 1, 2008
| Version v1
Journal article
Hubbard-Thomas-Fermi theory of transition metal oxide heterostructures
Creators
- 1. Department of Physics, University of Texas at Austin, Austin, TX 78712 (United States)
Description
We demonstrate that the charge distributions in Hubbard-model representations of transition metal oxide heterojunctions can be described by a Thomas-Fermi theory in which the energy is approximated as the sum of the electrostatic energy and the uniform three-dimensional Hubbard model energy per site at the local density equals to a constant. When charged atomic layers in the oxides are approximated as two-dimensional sheets with uniform charge density, the electrostatic energy is simply evaluated. We find that this Thomas-Fermi theory can reproduce results obtained from full Hartree-Fock theory for various different heterostructures. We also show explicitly how Thomas-Fermi theory can be used to estimate some key properties qualitatively
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2007.10.191Additional details
Identifiers
- DOI
- 10.1016/j.physb.2007.10.191;
- arXiv
- arXiv:0708.0554v1;
- PII
- S0921-4526(07)01222-7;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 403
- Journal Issue
- 5-9
- Journal Page Range
- p. 1558-1560
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- International conference on strongly correlated electron systems
- Acronym
- SCES'07
- Dates
- 13-18 May 2007
- Place
- Houston, TX (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39062439
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE DENSITY; CHARGE DISTRIBUTION; DENSITY; HARTREE-FOCK METHOD; HETEROJUNCTIONS; HUBBARD MODEL; INTERFACES; LAYERS; OXIDES; THOMAS-FERMI MODEL; THREE-DIMENSIONAL CALCULATIONS; TRANSITION ELEMENTS; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- APPROXIMATIONS; ATOMIC MODELS; CALCULATION METHODS; CHALCOGENIDES; CRYSTAL MODELS; ELEMENTS; MATHEMATICAL MODELS; METALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.