Observation of large low-field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites

We report on the fabrication of a new class of trilayer epitaxial thin film devices based on the doped perovskite manganates La endash Ca endash Mn endash O and La endash Sr endash Mn endash O. We show that large resistance changes, up to a factor of 2, can be induced by a moderate applied magnetic field below 200 Oe in these trilayers supporting current-perpendicular-to-plane transport. These results show that low-field spin-dependent transport in manganates can be accomplished, the magnitude of which is suitable for magnetoresistive field sensors. copyright 1996 American Institute of Physics