Published February 1995 | Version v1
Journal article

New model of electron screening for an ion diode in an external magnetic field

  • 1. Rossijskij Nauchnyj Tsentr Kurchatovskij Inst., Moscow (Russian Federation)

Description

Substantial mechanism of electron mixing resulting from destruction of laminar structure of magnetoisolated electron layer due to instabilities is introduced for consideration. It results in formation of plasma like medium with ne∼B equilibrium state that explains the effects of voltage drop at diode (voltage decay) and of abrupt drop of phase velocity of electromagnetic waves in diode observed in the experiment and in numerical calculations. Comparison of the developed theory with the experiment results in empirical fact of constant rate of electron accumulation in diode gap. 19 refs.; 2 figs

Additional details

Additional titles

Original title (Russian)
Новая модель электронного экранирования для ионного диода во внешнем магнитном поле

Publishing Information

Journal Title
Pis'ma v Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki
Journal Volume
61
Journal Issue
3-4
Journal Page Range
p. 193-200.
ISSN
0370-274X
CODEN
PZETAB

INIS