Ion beam modification studies of InP based multi quantum wells
Creators
- 1. School of Physics, University of Hyderabad, Central University (P.O.), Hyderabad 500 046 (India)
- 2. Soltan Institute of Nuclear Studies, 05-400 Swierk/Otwock (Poland)
- 3. Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw (Poland)
- 4. Inter University Accelerator Centre, P.O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
- 5. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 602 103 (India)
- 6. Tata Institute of Fundamental Research, Homibhabha Road, Colaba, Mumbai 400 005 (India)
Description
Effects of heavy ion irradiation on InP based structures have been discussed. In specific, recent results on heavy ion irradiation of InP and InGaAs/InP multi quantum wells have been studied as a function of incident ion fluence and electronic energy loss. Studies involve photoluminescence (PL), high resolution X-ray diffraction (HRXRD), raman spectroscopy (RS) and atomic force microscopy (AFM). The heavy ion induced modifications in InP have been analyzed and damage creation has been correlated with a possible mechanisms. Multi quantum wells were investigated before and after irradiation and band gap engineering has been demonstrated using swift heavy ions for the first time. Band gap shift as a function of incident ion fluence has been observed and a maximum shift of 82 nm for a fluence of 1 x 1013 ions/cm2 has been reported. Possible applications in optoelectronic devices are highlighted
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2007.12.106Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2007.12.106;
- PII
- S0168-583X(08)00026-8;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 266
- Journal Issue
- 8
- Journal Page Range
- p. 1810-1815
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 18. international conference on ion beam analysis
- Dates
- 23-28 Sep 2007
- Place
- Hyderabad (India)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40013490
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; DAMAGE; ENERGY LOSSES; GALLIUM ARSENIDES; HEAVY IONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION BEAMS; IRRADIATION; PHOTOLUMINESCENCE; QUANTUM WELLS; RAMAN SPECTROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; LASER SPECTROSCOPY; LOSSES; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.