Published January 14, 1998
| Version v1
Journal article
Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films
Creators
- 1. Indian Inst. of Tech., Bombay (India). Dept. of Chemistry
Description
Photosensitive thin films of binary and ternary phase semiconductors have been deposited on metallic substrates by non-catalytic displacement plating (NCDP). Various preparative parameters are optimized for deposition of CdSe, CdTe and ZnCdSe on Zn and Ti substrates. Bandgap of Zn(1-x)CdxSe has been tailored from 1.68 to 2.53 eV for various Zn/Cd molar ratios. Photoelectrodes thus prepared are found to yield a short circuit current up to 2 μA and an open circuit voltage up to 0.45 V in S2-/S22- electrolyte. (orig.)
Additional details
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 312
- Journal Issue
- 1-2
- Journal Page Range
- p. 139-146
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 29041692
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM COMPOUNDS; COATINGS; ELECTROLYTES; ENERGY GAP; PHOTOCONDUCTIVITY; REFLECTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; THIN FILMS; VISIBLE SPECTRA; X-RAY DIFFRACTION; ZINC COMPOUNDS
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; FILMS; MATERIALS; MICROSCOPY; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SCATTERING; SPECTRA; SURFACE PROPERTIES
Optional Information
- Notes
- 12 refs.