On the spectrum of deep levels produced in silicon radiation detectors by α-particles

Radiation defects resulted from α-irradiation in radiation silicon detector made using substance grown by Czochralski technique and crucibleless melting, are studied. Comparison of results of electron and α-irradiation, as well as, of effect of different dose and energy α-particles is carried out. General nature and unstable character of centres, occuring in the low part of the forbidden zone directly after effect of α-irradiation, under room temperature are determined. Effect of thermal actions on spectrum of radiation defects in silicon is shown