Published May 2018
| Version v1
Miscellaneous
Performance Study of Si PIN Photodiode for Radiation Detector
Creators
- 1. Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)
Description
In this study, the Si PIN photodiode was fabricated by in Radiation Equipment Fab. Center of KAERI (Korea Atomic Energy Research Institute) for measurement of low energy gamma and X-ray. We carried out performance of in-house fabricated Si PIN photodiode for the properties of electrical and radiation detection efficiency. In conclusion, we have studied the fabrication and radiation detection characteristics of Si PIN photodiode. From the current-voltage and radiation response characteristics, we confirmed the leakage current of ~18 nA at reverse voltage -70V and good radiation responsivity for a 10 x 10 mm2 active area.
Additional details
Identifiers
- URL
- https://www.kns.org;
Publishing Information
- Publisher
- KNS
- Imprint Place
- Daejeon (Korea, Republic of)
- Imprint Title
- Proceedings of the KNS 2018 Spring Meeting
- Imprint Pagination
- vp.
- Journal Page Range
- [2 p.]
Conference
- Title
- 2018 Spring Meeting of the KNS
- Dates
- 16-18 May 2018
- Place
- Jeju (Korea, Republic of)
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 50059619
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- FABRICATION; KAERI; LEAKS; OPTIMIZATION; PERFORMANCE; PHOTODIODES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- KOREAN ORGANIZATIONS; MEASURING INSTRUMENTS; NATIONAL ORGANIZATIONS; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- 4 refs, 3 figs