Microstructural defects induced by implantation of hydrogen in (111) silicon

Silicon crystals have been implanted with hydrogen at high energy. In order to obtain a constant distribution of hydrogen through a wide zone located from 20 to 50 μm from the surface, 23 different energies have been used, ranging from 1 to 2 MeV. The samples have then been annealed 30 min at temperatures ranging from 100 to 1100oC and examined by transmission electron microscopy (TEM). Only two types of planar defects lying in {111} planes have been observed: fault-like defects (F) and loop-like defects (L). The present paper reports a detailed TEM study of the structure of the F and L defects observed in a (111) crystal. We propose a model which gives a coherent interpretation of the various characteristics of these defects. (Author)