Published June 2009
| Version v1
Journal article
Relaxation of optically stimulated resistance of thin SnO2 films
Creators
- 1. Voronezh State Technical University (Russian Federation)
Description
The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO2-based test structures of gas sensors in air before and after the high-temperature stabilizing annealing are presented. The features in the variation of the SnO2-layer resistance in time are established when the LED is switched on and off.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 43
- Journal Issue
- 6
- Journal Page Range
- p. 782-786
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41011178
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AIR; ANNEALING; FILMS; IRRADIATION; LAYERS; LIGHT EMITTING DIODES; PHOTONS; RELAXATION; SENSORS; TEMPERATURE RANGE 0400-1000 K; TIN OXIDES
- Descriptors DEC
- BOSONS; CHALCOGENIDES; ELEMENTARY PARTICLES; FLUIDS; GASES; HEAT TREATMENTS; MASSLESS PARTICLES; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Pleiades Publishing, Ltd.