Published December 1997
| Version v1
Journal article
SEU critical charge and sensitive area in a submicron CMOS technology
Creators
- 1. Univ. Montpellier II (France)
- 2. CNES, Toulouse (France)
Description
This work presents SEU phenomena in advanced SRAM memory cells. Using mixed-mode simulation, the effects of scaling on the notions of sensitive area and critical charge is shown. Specifically, the authors quantify the influence of parasitic bipolar action in cells fabricated in a submicron technology
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 44
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 2266-2273
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 34. IEEE nuclear and space radiation effects conference
- Dates
- 21-25 Jul 1997
- Place
- Snowmass, CO (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 29060995
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; ERRORS; HEAVY IONS; PHYSICAL RADIATION EFFECTS; SCALING LAWS; SEMICONDUCTOR STORAGE DEVICES
- Descriptors DEC
- CHARGED PARTICLES; IONS; MEMORY DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES
Optional Information
- Secondary number(s)
- CONF-970711--