Published July 28, 2014
| Version v1
Journal article
Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer
Creators
- 1. DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)
Description
We describe a CZTSSe (Cu2ZnSn(S1−x,Sex)4) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO2, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.
Additional details
Identifiers
- DOI
- 10.1063/1.4891852;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 4
- Journal Page Range
- p. 042108-042108.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46017372
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUFFERS; CAPACITANCE; COPPER COMPOUNDS; CURRENTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SELENIUM COMPOUNDS; SPECTROSCOPY; SULFUR COMPOUNDS; SURFACES; TIN COMPOUNDS; TITANIUM OXIDES; ZINC COMPOUNDS
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC