Published October 15, 1973
| Version v1
Journal article
Thin dE/dx detectors of uniform thickness made on epitaxial silicon
Creators
- 1. Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. de Physique des Rayonnements et d'Electronique Nucleaire
- 2. Clermont-Ferrand Univ., 63 (France). Lab. de Physique Nucleaire
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- Nuclear Instruments and Methods
- Journal Volume
- 112
- Journal Issue
- 3
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 465-467
- ISSN
- 0029-554X
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 5115530
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANODES; DISSOLUTION; ELECTRIC CONDUCTIVITY; ENERGY SPECTRA; EPITAXY; FILMS; NITROGEN; NITROGEN IONS; SENSITIVITY; SILICON; SUBSTRATES; SURFACE BARRIER DETECTORS; THICKNESS
- Descriptors DEC
- CHARGED PARTICLES; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTRODES; ELEMENTS; IONS; MEASURING INSTRUMENTS; NONMETALS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent