Atomistic spin dynamics simulations on Mn-doped GaAs and CuMn
Creators
- 1. Department of Physics and Materials Science, Uppsala University, Box 530, SE-751 21 Uppsala (Sweden)
Description
The magnetic dynamical behavior of two random alloys have been investigated in atomistic spin dynamics (ASD) simulations. For both materials, magnetic exchange parameters calculated with first principles electronic structure methods were used. From experiments it is well known that CuMn is a highly frustrated magnetic system and a good manifestation of a Heisenberg spin glass. In our ASD simulations the behavior of the autocorrelation function indicate spin glass behavior. The diluted magnetic semiconductor (DMS) Mn-doped GaAs is engineered with hopes of high enough Curie temperatures to operate in spintronic devices. Impurities such as As antisites and Mn interstitials change the exhange couplings from being mainly ferromagnetic to also have antiferromagnetic components. We explore how the resulting frustration affects the magnetization dynamics for a varying rate of As antisites.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/200/7/072040Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 200
- Journal Issue
- 7
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- international conference on magnetism
- Acronym
- ICM 2009
- Dates
- 26-31 Jul 2009
- Place
- Karlsruhe (Germany)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42041719
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIFERROMAGNETISM; BINARY ALLOY SYSTEMS; COPPER COMPOUNDS; COUPLING; CURIE POINT; DOPED MATERIALS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; IMPURITIES; INTERSTITIALS; MAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MANGANESE ADDITIONS; MANGANESE COMPOUNDS; RANDOMNESS; SIMULATION; SPIN; SPIN GLASS STATE
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; MAGNETISM; MANGANESE ALLOYS; MATERIALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; SEMICONDUCTOR MATERIALS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE