Published June 19, 2006 | Version v1
Journal article Metadata-only

Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology

Creators

  • 1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024 (China)

Description

Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was observed on Si (001) substrate at different temperatures ranging from room temperature to 750 deg. C. The epitaxial relationship was determined to be ZnO(001) parallel Si(001) in the direction normal to the surface of the films with a deviated angle less than 3 deg. and ZnO[100] parallel Si[110] or ZnO[310] parallel Si[110] in the plan view. Based on (2x1) reconstruction of Si (001), a heteroepitaxial model was suggested to discuss the influence of Si (001) substrate on the growth and morphology of ZnO films at different temperatures

Additional details

Identifiers

DOI
10.1063/1.2216103;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
88
Journal Issue
25
Journal Page Range
p. 251911-251911.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37083717
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; DEPOSITION; EPITAXY; FILMS; LAYERS; MORPHOLOGY; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMIMETALS; TEMPERATURE RANGE; ZINC COMPOUNDS

Optional Information

Notes
(c) 2006 American Institute of Physics