Published February 1, 2019
| Version v1
Journal article
Electronic and optical properties of SnO2 (110)/MAPbI3 (100) interface by first-principles calculations
- 1. State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China)
Description
The interface structure, bonding energy, electronic properties and optical absorption properties of SnO2 (110)/MAPbI3 (100) interface were explored using the first-principles calculations. The lattice mismatch between SnO2 (110) and MAPbI3 (100) is 5.8%, and the interface structures were investigated in consideration of two different terminations with bonding energy about −0.79 J m−2 and −0.70 J m−2, respectively. Meanwhile, we found some interface states nearby the SnO2 (110)/MAPbI3 (100) interface. These interface states mainly come from 6s, 6p orbitals of Pb, 5p orbital of I and 2p orbital of O, which present on the first interface layers of MAPbI3 and SnO2. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/aaf2afAdditional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 6
- Journal Issue
- 2
- Journal Page Range
- [7 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51095222
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; INTERFACES; OPTICAL PROPERTIES; OXIDATION; TIN OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TIN COMPOUNDS