Published February 1, 2019 | Version v1
Journal article

Electronic and optical properties of SnO2 (110)/MAPbI3 (100) interface by first-principles calculations

  • 1. State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou 730050 (China)

Description

The interface structure, bonding energy, electronic properties and optical absorption properties of SnO2 (110)/MAPbI3 (100) interface were explored using the first-principles calculations. The lattice mismatch between SnO2 (110) and MAPbI3 (100) is 5.8%, and the interface structures were investigated in consideration of two different terminations with bonding energy about −0.79 J m−2 and −0.70 J m−2, respectively. Meanwhile, we found some interface states nearby the SnO2 (110)/MAPbI3 (100) interface. These interface states mainly come from 6s, 6p orbitals of Pb, 5p orbital of I and 2p orbital of O, which present on the first interface layers of MAPbI3 and SnO2. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/aaf2af

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
6
Journal Issue
2
Journal Page Range
[7 p.]
ISSN
2053-1591

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51095222
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL DEFECTS; INTERFACES; OPTICAL PROPERTIES; OXIDATION; TIN OXIDES
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TIN COMPOUNDS