Orientational dependence of α-particle yield from the 11B(p,α)8Be reaction in ion-implanted InP(11B) and InAs(11B) structures

Localization of 11B atoms implanted to InP and InAs and change in localization of these atoms during after-implantation annealing are determined. To determine location of boron atoms, orientation dependence of d-particle yield of the 11B(p,α8Be reaction excited with channeled protons with 670 keV energy is investigated. Angular dependences measured of nonlocalized α-particle yield of the reaction and protons of backscattered on matrix nuclei have shown that as a result of after-implantation relaxation processes a large part of implanted atoms occupies the nodes of crystal lattice. 6 refs; 1 fig