Published September 2014 | Version v1
Journal article

Peculiarities of boron distribution in as-grown boron-doped diamond

  • 1. Technological Institute for Superhard and Novel Carbon Materials, Centralnaya str. 7a, Troitsk 142190, Moscow (Russian Federation)

Description

Boron doped diamond (BDD) single crystals have been grown under conditions of high isostatic pressure by the temperature gradient method. Numerous equilateral triangles were found on the fluorescence images of {111}-diamond facets. Structural peculiarities of BDD were investigated by JEM-2010 transmission electron microscope with GIF Quantum attachment for electron energy loss spectroscopy (EELS). High resolution image of diamond lattice revealed some distorted {111}-layers. EELS testifies the presence of boron in distorted regions of diamond lattice. The crystallographic features of BDD and their connection with the superconductivity are discussed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/1/3/035905

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
1
Journal Issue
3
Journal Page Range
[12 p.]
ISSN
2053-1591