Published June 22, 2000
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Longevity Improvement of Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches
Description
no abstract available
Availability note (English)
Available from INIS in electronic form; Also available from OSTI as DE00760787; PURL: https://www.osti.gov/servlets/purl/760787-FIdN6B/webviewable/Files
32016773.pdf
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Additional details
Identifiers
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- SAND--2000-1545C
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 32016773
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- GALLIUM ARSENIDES; LIFETIME; OPTICAL ACTIVITY; OPTIMIZATION; PHOTOCONDUCTIVITY; RELIABILITY; SEMICONDUCTOR SWITCHES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; GALLIUM COMPOUNDS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SWITCHES
Optional Information
- Contract/Grant/Project number
- AC04-94AL85000
- Notes
- Presented at 'The 2000 Twenty-Fourth International Power Modulator Symposium'
- Funding organization
- US Department of Energy (United States)