Published 1987
| Version v1
Miscellaneous
Layer-by-layer neutron activation analysis of semiconductor silicon plates
Creators
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Послойный нейтронно-активационный анализ пластин полупроводникового кремния
Publishing Information
- Imprint Title
- 5. All-union conference on activation analysis and other radioanalytical methods. V. 2
- Imprint Pagination
- 247 p.
- Journal Page Range
- p. 238.
- Report number
- INIS-SU--181
Conference
- Title
- 5. All-union conference on activation analysis and other radioanalytical methods.
- Dates
- 26-28 May 1987.
- Place
- Tashkent (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 21081634
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- FLUX DENSITY; HEAT TREATMENTS; IMPURITIES; LAYERS; NEUTRON ACTIVATION ANALYSIS; NEUTRON FLUX; PLATES; QUANTITATIVE CHEMICAL ANALYSIS; SEMICONDUCTOR MATERIALS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ACTIVATION ANALYSIS; CHEMICAL ANALYSIS; DISTRIBUTION; ELEMENTS; MATERIALS; NONDESTRUCTIVE ANALYSIS; RADIATION FLUX; SEMIMETALS
Optional Information
- Notes
- Imprint:5. Vsesoyuznoe soveshchanie po aktivatsionnomu analizu i drugim radioanaliticheskim metodam. Tom 2.;Tezisy dokladov.