Magnetron sputtering of aluminium nitride thin films

The paper presents the results of studies on depositing thin transparent layers of aluminium nitride by magnetron sputtering using low frequency power system (160 kHz). The obtained AlN had a hexagonal structure with the privileged grow direction (002). The applied reaction conditions enable deposition of thin layers, less than 1 μm thick, perfectly adherent and showing no internal stresses. Transmission measurements within the wave length range 200-900 nm, carried out with a Phillips PU8785 spectrophotometer, permitted estimation of the energy gap of about 5 eV. There was no evidence of oxygen impurities in the obtained stoichiometric AlN. (author)