Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field
- 1. Institute of Solid State Physics - BAS, Boulevard Tzarigradsko Chaussee 72, BG-1784 Sofia (Bulgaria)
- 2. SCK.CEN, Reactor Materials Research, Boeretang 200, 2400 Mol (Belgium)
- 3. EMAT, RUCA, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)
- 4. Dipartimento di Enerdetica, Univ. La Sapienza, Via A. Scarpa 14, 00161 Rome (Italy)
Description
The post-implantation effect of high frequency electromagnetic field (HFEMF) on the microstructure and electrical properties of high dose Te+ and Bi+ implanted (1 0 0) Si was investigated by cross-sectional high resolution transmission electron microscopy and four-point probe electrical measurements. Te and Bi nanoclusters (NCs) embedded in amorphized Si have been formed by ion implantation. Post-implantation treatment with HFEMF reorganizes the cluster shape and distribution by stimulation of spinodal decomposition and ordering of Te NCs to a percolation system. The effect of HFEMF on Bi NCs is assumed to be connected with the formation of electrical microcurrents causing local heating of their interfaces with the a-Si matrix. The results of electrical measurements show that the HFEMF application reduces the sheet resistance by a factor of about 6 for Te+ and about 3 for Bi+ irradiation
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.08.017;
- PII
- S0168-583X(05)01507-7;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 242
- Journal Issue
- 1-2
- Journal Page Range
- p. 209-213
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 14. international conference on ion beam modification of materials
- Dates
- 5-10 Sep 2004
- Place
- Pacific Grove, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068419
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BISMUTH IONS; DECOMPOSITION; DISTRIBUTION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC FIELDS; HEATING; INTERFACES; ION BEAMS; ION IMPLANTATION; IRRADIATION; MICROSTRUCTURE; NANOSTRUCTURES; PROBES; SHAPE; SHEETS; SILICON; SYNTHESIS; TELLURIUM IONS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CHEMICAL REACTIONS; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; IONS; MICROSCOPY; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.